Kaufen 2N7002F,215 mit BYCHPS
Kaufen mit Garantie
2N7002F,215
- Artikelnummer:
- 2N7002F,215
- Hersteller:
- NXP Semiconductors / Freescale
- Beschreibung:
- MOSFET N-CH 60V 475MA SOT23
- Bleifreier Status / RoHS Status:
- Bleifrei / RoHS-konform
- verfügbare Anzahl:
- 15591 Pieces
- Datenblatt:
- 2N7002F,215.pdf
Einführung
BYCHIPS ist der Strumpfhändler für 2N7002F,215, wir haben die Lagerbestände zum sofortigen Versand und auch zur Langzeitversorgung. Bitte senden Sie uns Ihren Kaufplan für 2N7002F,215 per E-Mail, wir geben Ihnen einen besten Preis nach Ihrem Plan.
Spezifikation
| VGS (th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | TO-236AB (SOT23) |
| Serie: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 500mA, 10V |
| Verlustleistung (max): | 830mW (Ta) |
| Verpackung: | Tape & Reel (TR) |
| Verpackung / Gehäuse: | TO-236-3, SC-59, SOT-23-3 |
| Andere Namen: | 2N7002F T/R 2N7002F T/R-ND 2N7002F,215-ND 568-5983-2 934056997215 |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
| Hersteller-Teilenummer: | 2N7002F,215 |
| Eingabekapazität (Ciss) (Max) @ Vds: | 50pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.69nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Expanded Beschreibung: | N-Channel 60V 475mA (Ta) 830mW (Ta) Surface Mount TO-236AB (SOT23) |
| Drain-Source-Spannung (Vdss): | 60V |
| Beschreibung: | MOSFET N-CH 60V 475MA SOT23 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 475mA (Ta) |
| Email: | [email protected] |
In Verbindung stehende Teile für 2N7002F,215
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
2N7002PM,315 | NXP USA Inc. | MOSFET N-CH 60V 0.3A SOT-883 | Anfrage |
 |
2N7002BKT,115 | NXP USA Inc. | MOSFET N-CH 60V 290MA SOT416 | Anfrage |
|
2N7002PT,115 | NXP USA Inc. | MOSFET N-CH 60V 0.31A SOT-416 | Anfrage |
 |
2N7002K,215 | NXP USA Inc. | MOSFET N-CH 60V 340MA SOT23 | Anfrage |
 |
SIS468DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 30A 1212-8 | Anfrage |
 |
AUIRL1404ZS | Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | Anfrage |
|
2N7002E,215 | Nexperia USA Inc. | MOSFET N-CH 60V 0.385A SOT23 | Anfrage |
 |
FQPF19N20CYDTU | Fairchild/ON Semiconductor | MOSFET N-CH 200V 19A TO-220F | Anfrage |
|
2N7002T,215 | NXP USA Inc. | MOSFET N-CH 60V 300MA SOT-23 | Anfrage |
 |
2N7000,126 | NXP USA Inc. | MOSFET N-CH 60V 300MA TO-92 | Anfrage |
 |
2SK2967(F) | Toshiba Semiconductor and Storage | MOSFET N-CH 250V 30A TO-3PN | Anfrage |
 |
NTB5605PT4 | ON Semiconductor | MOSFET P-CH 60V 18.5A D2PAK | Anfrage |
 |
SI7374DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 24A PPAK SO-8 | Anfrage |
 |
APT5518BFLLG | Microsemi Corporation | MOSFET N-CH 550V 31A TO-247 | Anfrage |
läst Nachrichten
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog