Kaufen BSO080P03SNTMA1 mit BYCHPS
Kaufen mit Garantie
BSO080P03SNTMA1
- Artikelnummer:
- BSO080P03SNTMA1
- Beschreibung:
- MOSFET P-CH 30V 12.6A 8DSO
- Bleifreier Status / RoHS Status:
- Enthält Blei / RoHS nicht konform
- verfügbare Anzahl:
- 19180 Pieces
- Datenblatt:
- BSO080P03SNTMA1.pdf
Einführung
BYCHIPS ist der Strumpfhändler für BSO080P03SNTMA1, wir haben die Lagerbestände zum sofortigen Versand und auch zur Langzeitversorgung. Bitte senden Sie uns Ihren Kaufplan für BSO080P03SNTMA1 per E-Mail, wir geben Ihnen einen besten Preis nach Ihrem Plan.
Spezifikation
| VGS (th) (Max) @ Id: | 2.2V @ 250µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | PG-DSO-8 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 14.9A, 10V |
| Verlustleistung (max): | 1.79W (Ta) |
| Verpackung: | Tape & Reel (TR) |
| Verpackung / Gehäuse: | 8-SOIC (0.154", 3.90mm Width) |
| Andere Namen: | BSO080P03S BSO080P03S-ND BSO080P03SINTR BSO080P03SINTR-ND BSO080P03SNT BSO080P03ST SP000014958 |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
| Hersteller-Teilenummer: | BSO080P03SNTMA1 |
| Eingabekapazität (Ciss) (Max) @ Vds: | 5890pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 136nC @ 10V |
| Typ FET: | P-Channel |
| FET-Merkmal: | - |
| Expanded Beschreibung: | P-Channel 30V 12.6A (Ta) 1.79W (Ta) Surface Mount PG-DSO-8 |
| Drain-Source-Spannung (Vdss): | 30V |
| Beschreibung: | MOSFET P-CH 30V 12.6A 8DSO |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 12.6A (Ta) |
| Email: | [email protected] |
In Verbindung stehende Teile für BSO080P03SNTMA1
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
BSO080P03NS3EGXUMA1 | Infineon Technologies | MOSFET P-CH 30V 12A 8DSO | Anfrage |
 |
SI3467DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 3.8A 6-TSOP | Anfrage |
|
BSO080P03S H | Infineon Technologies | MOSFET P-CH 30V 12.6A 8DSO | Anfrage |
|
BSO080P03NS3GXUMA1 | Infineon Technologies | MOSFET P-CH 30V 12A 8DSO | Anfrage |
|
BSO083N03MSGXUMA1 | Infineon Technologies | MOSFET N-CH 30V 11A 8DSO | Anfrage |
 |
NVMFS4841NWFT1G | ON Semiconductor | MOSFET N-CH 30V 89A SO8FL | Anfrage |
 |
BUK7606-55A,118 | Nexperia USA Inc. | MOSFET N-CH 55V 75A D2PAK | Anfrage |
 |
CPH3348-TL-W | ON Semiconductor | MOSFET P-CH 12V 3A CPH3 | Anfrage |
 |
IRFR420TRL | Vishay Siliconix | MOSFET N-CH 500V 2.4A DPAK | Anfrage |
 |
IPP65R110CFDAAKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-220-3 | Anfrage |
 |
IXFH22N65X2 | IXYS | MOSFET N-CH 650V 22A TO-247 | Anfrage |
läst Nachrichten
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog