Kaufen FDZ2553NZ mit BYCHPS
Kaufen mit Garantie
FDZ2553NZ
- Artikelnummer:
- FDZ2553NZ
- Hersteller:
- Fairchild/ON Semiconductor
- Beschreibung:
- MOSFET 2N-CH 20V 9.6A BGA
- Bleifreier Status / RoHS Status:
- Bleifrei / RoHS-konform
- verfügbare Anzahl:
- 19631 Pieces
- Datenblatt:
- FDZ2553NZ.pdf
Einführung
BYCHIPS ist der Strumpfhändler für FDZ2553NZ, wir haben die Lagerbestände zum sofortigen Versand und auch zur Langzeitversorgung. Bitte senden Sie uns Ihren Kaufplan für FDZ2553NZ per E-Mail, wir geben Ihnen einen besten Preis nach Ihrem Plan.
Spezifikation
| VGS (th) (Max) @ Id: | 1.5V @ 250µA |
|---|---|
| Supplier Device-Gehäuse: | 18-BGA (2.5x4) |
| Serie: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 14 mOhm @ 9.6A, 4.5V |
| Leistung - max: | 2.1W |
| Verpackung: | Tape & Reel (TR) |
| Verpackung / Gehäuse: | 18-WFBGA |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
| Hersteller-Teilenummer: | FDZ2553NZ |
| Eingabekapazität (Ciss) (Max) @ Vds: | 1240pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
| Typ FET: | 2 N-Channel (Dual) |
| FET-Merkmal: | Logic Level Gate |
| Expanded Beschreibung: | Mosfet Array 2 N-Channel (Dual) 20V 9.6A 2.1W Surface Mount 18-BGA (2.5x4) |
| Drain-Source-Spannung (Vdss): | 20V |
| Beschreibung: | MOSFET 2N-CH 20V 9.6A BGA |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 9.6A |
| Email: | [email protected] |
In Verbindung stehende Teile für FDZ2553NZ
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
FDZ2554P | Fairchild/ON Semiconductor | MOSFET 2P-CH 20V 6.5A BGA | Anfrage |
 |
DMC3025LSD-13 | Diodes Incorporated | MOSFET N/P-CH 30V 6.5A/4.2A 8SO | Anfrage |
|
NDH8304P | Fairchild/ON Semiconductor | MOSFET 2P-CH 20V 2.7A SSOT8 | Anfrage |
 |
SI4505DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V/8V 8-SOIC | Anfrage |
|
FDZ2553N | Fairchild/ON Semiconductor | MOSFET 2N-CH 20V 9.6A BGA | Anfrage |
 |
ALD1105PBL | Advanced Linear Devices Inc. | MOSFET 2N/2P-CH 10.6V 14DIP | Anfrage |
|
FDZ2554PZ | Fairchild/ON Semiconductor | MOSFET 2P-CH 20V 6.5A BGA | Anfrage |
 |
NTMFD4C87NT3G | ON Semiconductor | MOSFET 2N-CH 30V 8DFN | Anfrage |
 |
NVTJD4001NT1G | ON Semiconductor | MOSFET 2N-CH 30V 0.25A SC-88 | Anfrage |
 |
SSM6N56FE,LM | Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A | Anfrage |
 |
EFC6612R-TF | ON Semiconductor | MOSFET 2N-CH 20V 23A EFCP | Anfrage |
 |
NTQD6866R2 | ON Semiconductor | MOSFET 2N-CH 20V 4.7A 8TSSOP | Anfrage |
läst Nachrichten
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog