Kaufen IPD053N08N3GBTMA1 mit BYCHPS
Kaufen mit Garantie
IPD053N08N3GBTMA1
- Artikelnummer:
- IPD053N08N3GBTMA1
- Beschreibung:
- MOSFET N-CH 80V 90A TO252-3
- Bleifreier Status / RoHS Status:
- Bleifrei / RoHS-konform
- verfügbare Anzahl:
- 17506 Pieces
- Datenblatt:
- IPD053N08N3GBTMA1.pdf
Einführung
BYCHIPS ist der Strumpfhändler für IPD053N08N3GBTMA1, wir haben die Lagerbestände zum sofortigen Versand und auch zur Langzeitversorgung. Bitte senden Sie uns Ihren Kaufplan für IPD053N08N3GBTMA1 per E-Mail, wir geben Ihnen einen besten Preis nach Ihrem Plan.
Spezifikation
| VGS (th) (Max) @ Id: | 3.5V @ 90µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | PG-TO252-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 90A, 10V |
| Verlustleistung (max): | 150W (Tc) |
| Verpackung: | Tape & Reel (TR) |
| Verpackung / Gehäuse: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andere Namen: | IPD053N08N3 G IPD053N08N3 G-ND IPD053N08N3 GTR-ND IPD053N08N3G SP000395183 |
| Betriebstemperatur: | -55°C ~ 175°C (TJ) |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
| Hersteller-Teilenummer: | IPD053N08N3GBTMA1 |
| Eingabekapazität (Ciss) (Max) @ Vds: | 4750pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Expanded Beschreibung: | N-Channel 80V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3 |
| Drain-Source-Spannung (Vdss): | 80V |
| Beschreibung: | MOSFET N-CH 80V 90A TO252-3 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 90A (Tc) |
| Email: | [email protected] |
In Verbindung stehende Teile für IPD053N08N3GBTMA1
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
IPD050N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Anfrage |
 |
IRFRC20TR | Vishay Siliconix | MOSFET N-CH 600V 2A DPAK | Anfrage |
 |
TK11A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11A TO-220SIS | Anfrage |
|
IPD053N08N3GATMA1 | Infineon Technologies | MOSFET N-CH 80V 90A TO252-3 | Anfrage |
 |
SUM70N03-09CP-E3 | Vishay Siliconix | MOSFET N-CH 30V 70A D2PAK | Anfrage |
|
IPD053N06N3GBTMA1 | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 | Anfrage |
|
IPD05N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A DPAK | Anfrage |
|
IPD053N06NATMA1 | Infineon Technologies | MOSFET N-CH 60V 18A TO252-3 | Anfrage |
|
IPD05N03LB G | Infineon Technologies | MOSFET N-CH 30V 90A DPAK | Anfrage |
 |
DMP2007UFG-13 | Diodes Incorporated | MOSFET P-CH 20V 18A PWRDI3333-8 | Anfrage |
|
IRL3705ZSPBF | Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | Anfrage |
 |
IPD050N03LGBTMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Anfrage |
läst Nachrichten
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog