Kaufen IPP037N08N3GHKSA1 mit BYCHPS
Kaufen mit Garantie
IPP037N08N3GHKSA1
- Artikelnummer:
- IPP037N08N3GHKSA1
- Beschreibung:
- MOSFET N-CH 80V 100A TO220-3
- Bleifreier Status / RoHS Status:
- Bleifrei / RoHS-konform
- verfügbare Anzahl:
- 19205 Pieces
- Datenblatt:
- IPP037N08N3GHKSA1.pdf
Einführung
BYCHIPS ist der Strumpfhändler für IPP037N08N3GHKSA1, wir haben die Lagerbestände zum sofortigen Versand und auch zur Langzeitversorgung. Bitte senden Sie uns Ihren Kaufplan für IPP037N08N3GHKSA1 per E-Mail, wir geben Ihnen einen besten Preis nach Ihrem Plan.
Spezifikation
| VGS (th) (Max) @ Id: | 3.5V @ 155µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | PG-TO-220-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.75 mOhm @ 100A, 10V |
| Verlustleistung (max): | 214W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-220-3 |
| Andere Namen: | SP000435332 |
| Betriebstemperatur: | -55°C ~ 175°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
| Hersteller-Teilenummer: | IPP037N08N3GHKSA1 |
| Eingabekapazität (Ciss) (Max) @ Vds: | 8110pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Expanded Beschreibung: | N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-TO-220-3 |
| Drain-Source-Spannung (Vdss): | 80V |
| Beschreibung: | MOSFET N-CH 80V 100A TO220-3 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 100A (Tc) |
| Email: | [email protected] |
In Verbindung stehende Teile für IPP037N08N3GHKSA1
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
IPP037N08N3GE8181XKSA1 | Infineon Technologies | MOSFET N-CH 80V 100A TO220-3 | Anfrage |
|
IPP034N08N5AKSA1 | Infineon Technologies | MOSFET N-CH TO220-3 | Anfrage |
|
IPP030N10N3GXKSA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | Anfrage |
|
IPP037N08N3GXKSA1 | Infineon Technologies | MOSFET N-CH 80V 100A TO220-3 | Anfrage |
|
IPP037N06L3GXKSA1 | Infineon Technologies | MOSFET N-CH 60V 90A TO220-3 | Anfrage |
|
IPP030N10N3GHKSA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | Anfrage |
|
IPP034N03LGXKSA1 | Infineon Technologies | MOSFET N-CH 30V 80A TO-220-3 | Anfrage |
|
IPP039N04LGXKSA1 | Infineon Technologies | MOSFET N-CH 40V 80A TO220-3 | Anfrage |
|
IPP03N03LA | Infineon Technologies | MOSFET N-CH 25V 80A TO-220AB | Anfrage |
|
IPP032N06N3GHKSA1 | Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | Anfrage |
|
IPP032N06N3GXKSA1 | Infineon Technologies | MOSFET N-CH 60V 120A TO220-3 | Anfrage |
|
IPP034N03LGHKSA1 | Infineon Technologies | MOSFET N-CH 30V 80A TO-220-3 | Anfrage |
läst Nachrichten
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog