Kaufen MSRT100160(A)D mit BYCHPS
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MSRT100160(A)D
- Artikelnummer:
- MSRT100160(A)D
- Hersteller:
- GeneSiC Semiconductor
- Beschreibung:
- DIODE GEN 1.6KV 100A 3 TOWER
- Bleifreier Status / RoHS Status:
- Bleifrei / RoHS-konform
- verfügbare Anzahl:
- 15173 Pieces
- Datenblatt:
- MSRT100160(A)D.pdf
Einführung
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Spezifikation
| Spannung - Forward (Vf) (Max) @ If: | 1.1V @ 100A |
|---|---|
| Spannung - Sperr (Vr) (max): | 1600V (1.6kV) |
| Supplier Device-Gehäuse: | Three Tower |
| Geschwindigkeit: | Standard Recovery >500ns, > 200mA (Io) |
| Serie: | - |
| Verpackung: | Bulk |
| Verpackung / Gehäuse: | Three Tower |
| Betriebstemperatur - Anschluss: | -55°C ~ 150°C |
| Befestigungsart: | Chassis Mount |
| Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
| Hersteller Standard Vorlaufzeit: | 10 Weeks |
| Hersteller-Teilenummer: | MSRT100160(A)D |
| Expanded Beschreibung: | Diode Array 1 Pair Series Connection Standard 1600V (1.6kV) 100A Chassis Mount Three Tower |
| Diodentyp: | Standard |
| Diodenkonfiguration: | 1 Pair Series Connection |
| Beschreibung: | DIODE GEN 1.6KV 100A 3 TOWER |
| Strom - Sperrleckstrom @ Vr: | 10µA @ 1600V |
| Strom - Richt (Io) (pro Diode): | 100A |
| Email: | [email protected] |
In Verbindung stehende Teile für MSRT100160(A)D
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
MSRT100140(A)D | GeneSiC Semiconductor | DIODE GEN 1.4KV 100A 3 TOWER | Anfrage |
|
MSRT10080(A)D | GeneSiC Semiconductor | DIODE GEN PURP 800V 100A 3 TOWER | Anfrage |
|
MSRT10060(A)D | GeneSiC Semiconductor | DIODE GEN PURP 600V 100A 3 TOWER | Anfrage |
|
MSRT15080(A) | GeneSiC Semiconductor | DIODE MODULE 800V 150A 3TOWER | Anfrage |
|
MSRT100100(A)D | GeneSiC Semiconductor | DIODE GEN 1KV 100A 3 TOWER | Anfrage |
|
MSRT100120(A)D | GeneSiC Semiconductor | DIODE GEN 1.2KV 100A 3 TOWER | Anfrage |
|
MSRT15060(A)D | GeneSiC Semiconductor | DIODE GEN PURP 600V 150A 3 TOWER | Anfrage |
|
MSRT15060(A) | GeneSiC Semiconductor | DIODE MODULE 600V 150A 3TOWER | Anfrage |
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