Kaufen SPP02N60S5HKSA1 mit BYCHPS
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VGS (th) (Max) @ Id: | 5.5V @ 80µA |
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Technologie: | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse: | PG-TO220-3-1 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.1A, 10V |
Verlustleistung (max): | 25W (Tc) |
Verpackung: | Tube |
Verpackung / Gehäuse: | TO-220-3 |
Andere Namen: | SP000012390 SP000681016 SPP02N60S5 SPP02N60S5-ND SPP02N60S5IN SPP02N60S5IN-ND SPP02N60S5X SPP02N60S5XK |
Betriebstemperatur: | -55°C ~ 150°C (TJ) |
Befestigungsart: | Through Hole |
Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
Hersteller-Teilenummer: | SPP02N60S5HKSA1 |
Eingabekapazität (Ciss) (Max) @ Vds: | 240pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 10V |
Typ FET: | N-Channel |
FET-Merkmal: | - |
Expanded Beschreibung: | N-Channel 600V 1.8A (Tc) 25W (Tc) Through Hole PG-TO220-3-1 |
Drain-Source-Spannung (Vdss): | 600V |
Beschreibung: | MOSFET N-CH 600V 1.8A TO-220 |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 1.8A (Tc) |
Email: | [email protected] |