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SPP07N60S5
- Artikelnummer:
- SPP07N60S5
- Beschreibung:
- MOSFET N-CH 650V 7.3A TO-220AB
- Bleifreier Status / RoHS Status:
- Bleifrei / RoHS-konform
- verfügbare Anzahl:
- 19305 Pieces
- Datenblatt:
- SPP07N60S5.pdf
Einführung
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Spezifikation
| VGS (th) (Max) @ Id: | 5.5V @ 350µA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | PG-TO220-3-1 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
| Verlustleistung (max): | 83W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-220-3 |
| Andere Namen: | SPP07N60S5BKSA1 SPP07N60S5IN SPP07N60S5X SPP07N60S5XTIN SPP07N60S5XTIN-ND |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
| Hersteller-Teilenummer: | SPP07N60S5 |
| Eingabekapazität (Ciss) (Max) @ Vds: | 970pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Expanded Beschreibung: | N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO220-3-1 |
| Drain-Source-Spannung (Vdss): | 650V |
| Beschreibung: | MOSFET N-CH 650V 7.3A TO-220AB |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 7.3A (Tc) |
| Email: | [email protected] |
In Verbindung stehende Teile für SPP07N60S5
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
SPP07N60C3XKSA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-220AB | Anfrage |
 |
SPP07N65C3XKSA1 | Infineon Technologies | LOW POWER_LEGACY | Anfrage |
|
SPP07N60CFDHKSA1 | Infineon Technologies | MOSFET N-CH 650V 6.6A TO-220 | Anfrage |
|
SPP07N60C3HKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-220AB | Anfrage |
|
SPP07N60S5HKSA1 | Infineon Technologies | LOW POWER_LEGACY | Anfrage |
|
SPP07N60S5XKSA1 | Infineon Technologies | LOW POWER_LEGACY | Anfrage |
 |
STGD1100LT1G | ON Semiconductor | MOSFET N-CH 20V 3.3A SC74 | Anfrage |
|
SPP07N65C3HKSA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO-220 | Anfrage |
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