Kaufen SPP20N60CFDHKSA1 mit BYCHPS
Kaufen mit Garantie
SPP20N60CFDHKSA1
- Artikelnummer:
- SPP20N60CFDHKSA1
- Beschreibung:
- MOSFET N-CH 650V TO-220AB
- Bleifreier Status / RoHS Status:
- Bleifrei / RoHS-konform
- verfügbare Anzahl:
- 13560 Pieces
- Datenblatt:
- SPP20N60CFDHKSA1.pdf
Einführung
BYCHIPS ist der Strumpfhändler für SPP20N60CFDHKSA1, wir haben die Lagerbestände zum sofortigen Versand und auch zur Langzeitversorgung. Bitte senden Sie uns Ihren Kaufplan für SPP20N60CFDHKSA1 per E-Mail, wir geben Ihnen einen besten Preis nach Ihrem Plan.
Spezifikation
| VGS (th) (Max) @ Id: | 5V @ 1mA |
|---|---|
| Technologie: | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse: | PG-TO-220-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 220 mOhm @ 13.1A, 10V |
| Verlustleistung (max): | 208W (Tc) |
| Verpackung: | Tube |
| Verpackung / Gehäuse: | TO-220-3 |
| Andere Namen: | SP000014475 |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Befestigungsart: | Through Hole |
| Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
| Hersteller-Teilenummer: | SPP20N60CFDHKSA1 |
| Eingabekapazität (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 124nC @ 10V |
| Typ FET: | N-Channel |
| FET-Merkmal: | - |
| Expanded Beschreibung: | N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO-220-3 |
| Drain-Source-Spannung (Vdss): | 650V |
| Beschreibung: | MOSFET N-CH 650V TO-220AB |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 20.7A (Tc) |
| Email: | [email protected] |
In Verbindung stehende Teile für SPP20N60CFDHKSA1
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
SPP20N60CFDXKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.7A TO-220 | Anfrage |
|
SPP20N65C3HKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.7A TO-220 | Anfrage |
 |
SPP20N60S5XKSA1 | Infineon Technologies | HIGH POWER_LEGACY | Anfrage |
|
SPP20N60C3XKSA1 | Infineon Technologies | MOSFET N-CH 600V 20.7A TO-220 | Anfrage |
|
SPP20N65C3XKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.7A TO-220-3 | Anfrage |
|
SPP20N60C3HKSA1 | Infineon Technologies | MOSFET N-CH 650V 20.7A TO-220 | Anfrage |
|
SPP20N60S5 | Infineon Technologies | MOSFET N-CH 650V 20A TO-220AB | Anfrage |
|
SPP20N60S5HKSA1 | Infineon Technologies | HIGH POWER_LEGACY | Anfrage |
läst Nachrichten
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog