Kaufen ZXGD3002E6TA mit BYCHPS
Kaufen mit Garantie
ZXGD3002E6TA
- Artikelnummer:
- ZXGD3002E6TA
- Hersteller:
- Diodes Incorporated
- Beschreibung:
- IC GATE DRVR IGBT/MOSFET SOT23-6
- Bleifreier Status / RoHS Status:
- Bleifrei / RoHS-konform
- verfügbare Anzahl:
- 19972 Pieces
- Datenblatt:
- ZXGD3002E6TA.pdf
Einführung
BYCHIPS ist der Strumpfhändler für ZXGD3002E6TA, wir haben die Lagerbestände zum sofortigen Versand und auch zur Langzeitversorgung. Bitte senden Sie uns Ihren Kaufplan für ZXGD3002E6TA per E-Mail, wir geben Ihnen einen besten Preis nach Ihrem Plan.
Spezifikation
| Spannungsversorgung: | 20V (Max) |
|---|---|
| Supplier Device-Gehäuse: | SOT-23-6 |
| Serie: | - |
| Aufstieg / Fallzeit (Typ): | 8.3ns, 10.8ns |
| Verpackung: | Tape & Reel (TR) |
| Verpackung / Gehäuse: | SOT-23-6 |
| Andere Namen: | ZXGD3002E6TR |
| Betriebstemperatur: | -55°C ~ 150°C (TJ) |
| Anzahl der Treiber: | 1 |
| Befestigungsart: | Surface Mount |
| Feuchtigkeitsempfindlichkeitsstufe (MSL): | 1 (Unlimited) |
| Hersteller-Teilenummer: | ZXGD3002E6TA |
| Logikspannung - VIL, VIH: | - |
| Eingabetyp: | Non-Inverting |
| Gate-Typ: | IGBT, N-Channel MOSFET |
| Expanded Beschreibung: | Low-Side Gate Driver IC Non-Inverting SOT-23-6 |
| Angetriebene Konfiguration: | Low-Side |
| Beschreibung: | IC GATE DRVR IGBT/MOSFET SOT23-6 |
| Strom - Spitzenleistung (Quelle, Sink): | 9A, 9A |
| Ladestrom: | Single |
| Email: | [email protected] |
In Verbindung stehende Teile für ZXGD3002E6TA
| Image | Artikelnummer | Hersteller | Beschreibung | Aussicht |
|---|---|---|---|---|
 |
ZXGD3003E6QTA | Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | Anfrage |
|
ZXGD3004E6TA | Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT23-6 | Anfrage |
|
ZXGD3003E6TA | Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT23-6 | Anfrage |
|
ZXGD3005E6TA | Diodes Incorporated | IC GATE DVR IGBT/MOSFET SOT26 | Anfrage |
|
ZXGD3001E6QTA | Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | Anfrage |
 |
ZXGD3009DYTA | Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT363 | Anfrage |
|
ZXGD3006E6QTA | Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | Anfrage |
|
ZXGD3001E6TA | Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT23-6 | Anfrage |
|
ZXGD3006E6TA | Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT26 | Anfrage |
|
ZXGD3009E6TA | Diodes Incorporated | IC GATE DRVR IGBT/MOSFET SOT23-6 | Anfrage |
läst Nachrichten
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog